Analysis of the 2p53s, 3p, 3d and 4s Configurations of Quadruply Ionized Silicon (Si V)
- 1 May 1976
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 13 (5) , 289-292
- https://doi.org/10.1088/0031-8949/13/5/005
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Radiative-lifetime measurements in Si II-Si VJournal of Physics B: Atomic and Molecular Physics, 1976
- Extension of the analysis of triply ionized aluminum (Al iv)Journal of the Optical Society of America, 1975
- Analysis of the spectrum of quadruply ionized aluminum (Al v)Journal of the Optical Society of America, 1974
- Revised analysis of the 2p^53s, 3p, 3d, and 4s configurations of triply ionized aluminum (Al iv)Journal of the Optical Society of America, 1974
- LS-term dependence of Slater integrals in pnp' configurations. II. Deviations from the single-configuration approximation in the np5n'p configurationsJournal of Physics B: Atomic and Molecular Physics, 1973
- Two- and three-electron electrostatic effective interactions in 1N1' configurationsJournal of Physics B: Atomic and Molecular Physics, 1970
- A multi-configuration Hartree-Fock programComputer Physics Communications, 1970