Electrical Contact Properties of Metal-Chalcogenide Amorphous Semiconductor Systems

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Abstract
Several metals were found to form rectifying contact with chalcogenide amorphous films. Photovoltaic effects were also found for samples exhibiting rectifying phenomena. Measurements of the frequency dependence of parallel resistance and capacitance revealed that a high resistivity layer with large thickness existed in the contact region between the amorphous films and metals with a strong inoization tendency, which should be referred to as the rectifying layer. This layer is though to be the alloy layer which was formed by a chemical reaction at the interface. The alloying processes due to the chemical reaction were inferred from the observation of a small short circuit current.