Enhancement-mode ion-implanted InP f.e.t.s

14 September 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (19) , 643-644
https://doi.org/10.1049/el:19780432

Abstract

Planar enhancement-mode InP f.e.t.s have been fabricated through the use of ion implantation and subsequent electron-beam lithography. Noise figures of 3.2 and 2.6 dB were achieved at 8 GHz with associated gains of 6.4 and 4.7 dB, respectively.

Keywords

INP FETS
NOISE FIGURES
ELECTRON BEAM LITHOGRAPHY
ION IMPLANTATION
PLANAR ENHANCEMENT MODE INP FETS