Oxygen Solubility in Liquid Silicon in Equilibrium with SiO and SiO2

Abstract
The oxygen content of heat‐treated and quenched samples has been analyzed by the SIMS technique in order to investigate the temperature dependence of the equilibrium . A phase was predicted by thermodynamical calculations and also verified experimentally. This phase appears in equilibrium with a melt of lower oxygen content than the phase and, when formed, determines the oxygen content of the melt. The existence of the phase in a Czochralski silicon crystal growth system was confirmed and the implications are briefly discussed.

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