Direct display of electron back tunneling in MNOS memory capacitors
- 1 August 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (3) , 152-153
- https://doi.org/10.1063/1.1654840
Abstract
Direct observation of back tunneling in MNOS requires the direct and continuous display of the charge previously injected into the insulator. A new experimental technique having such a feature is presented. It is characterized by its simultaneous and direct measurements of both the change in charge in the insulator and the corresponding change in the device's flat‐band voltage. Charge loss via back tunneling in devices of different tunnel‐oxide thicknesses is presented.Keywords
This publication has 2 references indexed in Scilit:
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969