I n s i t u epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source

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Abstract
In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films was performed by ion beam sputtering in atomic oxygen ambience at the substrate temperature of 640 °C. The films showed an epitaxial growth in which the a and b axes were parallel to 〈100〉 MgO, and the superstructure according to the incommensurate modulation along the b axis was also observed. The superconducting properties of the as‐grown films seemed to sensitively depend on the oxidation treatment during the cooling down process. The zero resistivity temperature Tc(R=0) of a 600‐Å‐thick film cooled down in the same atomic oxygen density as the film growth ambience was 60 K, but it increased up to 80 K after a post‐deposition annealing at 500 °C for 1 h in air. In contrast, as‐grown films cooled down in insufficient <named-content xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:oasis="http://www.niso.org/standards/z39-96/ns/oasis-exchange/table"...