Doping of InP and GaInAs with S during metalorganic vapor-phase epitaxy

Publisher Website
Google Scholar
Abstract
The doping characteristics of S in the metalorganic vapor-phase epitaxial growth of InP and GaInAs are studied using three different but consistent methods of determining the doping level in the crystal, Hall effect, electrochemical C-V profiling and by C-V bias over distances of ∼0.5 μm. It is shown that under the same growth conditions the doping level in InP is 3.5 times larger than in GaInAs and increases 100-fold when the growth temperature is decreased from 625 to 525 °C. S is shown to be a useful donor, essentially completely ionized at room temperature, easily incorporated at levels ≲1018 cm−3 into metalorganic vapor-phase epitaxy growth at 625 °C where crystal morphology is optimized and at high levels ∼1020 cm−3 to form low-impedance n-contact layers with growth at 525 °C.