Measurement of physical properties of gallium arsenide and silicon by electrochemical methods
- 30 June 1975
- journal article
- Published by Elsevier in Surface Science
- Vol. 50 (2) , 580-590
- https://doi.org/10.1016/0039-6028(75)90046-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Hole injection and surface state effects at gallium arsenide electrodesSurface Science, 1973
- Some Aspects of the Anodic Behaviour of CdS Single Crystals in Indifferent Electrolyte SolutionsBerichte der Bunsengesellschaft für physikalische Chemie, 1973
- Differential Capacitance of GaAs-Electrolyte ContactJapanese Journal of Applied Physics, 1972
- Impedance measurements at the semiconductor-electrolyte interfaceSurface Science, 1969
- On the origin of the photo-emf at the gallium-arsenide/electrolyte interfaceElectrochimica Acta, 1967
- Hydrogen Evolution on Single Crystal GaAs ElectrodesJournal of the Electrochemical Society, 1967