A CMOS structure using beam-recrystallized polysilicon
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (11) , 341-343
- https://doi.org/10.1109/EDL.1982.25594
Abstract
A new CMOS structure has been fabricated with the p-channel transistors in a layer of recrystallized polysilicon and the n-channel transistors in adjacent, laterally displaced regions of the underlying single-crystal silicon. The process allows the use of existing circuit layouts with only minor, if any, modification. Moderate quality transistors are fabricated in a layer of recrystallized polysilicon without degrading the characteristics of high-quality transistors simultaneously formed in the substrate. The oscillation period of ring oscillators is close to that calculated, and varies with the transistor dimensions in the expected manner.Keywords
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