Quantum well AlxGa1−xAs-GaAs lasers with internal (Si2)x(GaAs)1−x barriers
- 24 March 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (12) , 800-802
- https://doi.org/10.1063/1.96674
Abstract
Data are presented showing that the alloy (Si2)x(GaAs)1−x can be formed in a GaAs quantum well (QW) and shifts the operation of an AlxGa1−xAs‐GaAs QW laser to higher energy. The (Si2)x(GaAs)1−x barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ‘‘capping’’ this with the remaining part of the QW, can be observed directly by transmission electron microscopy.Keywords
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