The effect of unswept epitaxial material on the microwave efficiency of IMPATT diodes

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (11) , 2066-2067
https://doi.org/10.1109/PROC.1967.6078

Abstract

Experimental results obtained by measurements on Ge IMPATT diodes show that one of the important parameters governing the microwave efficiency of these diodes is the thickness of the unswept expitaxial material at breakdown. It is shown that about 3 µ of unswept epitaxial material can reduce the efficiency by a factor of 10.

Keywords

DIODES
ELECTRIC BREAKDOWN
ETCHING
IMPURITIES
DOPING
MICROWAVE MEASUREMENTS
CAPACITANCE MEASUREMENT
FREQUENCY MEASUREMENT
THICKNESS MEASUREMENT
LABORATORIES

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