Epitaxial silicon solar cells
- 15 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (4) , 231-234
- https://doi.org/10.1063/1.88709
Abstract
p+/p/n/n+ epitaxial silicon solar‐cell structures were fabricated with the n‐base region intentionally graded over 2 orders of magnitude in a thickness of 35 μm. Solar cells made from these layers exhibited near‐ideal I‐V characteristics in the practical operating range, with an open‐circuit voltage of 636 mV, fill factor of 0.79, and AM1 efficiency of 12.6%. A similar epitaxial structure containing no gradient in the n‐base showed good solar‐cell performance but lower open‐circuit voltage (603 mV).Keywords
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