Localization of Disordered Electron Systems – A Numerical Analysis of the Anderson Transition

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Abstract
Results of numerical investigations of the Anderson model for electronic states in disordered systems are reported. The localization length and the d.c.-conductivity have been computed and the respective critical exponents close to the metal-insulator transition are derived. The universality of these exponents corroborates the validity of the one-parameter scaling hypothesis; the numerical values of 1.5 ± 0.2, however, deviate from analytical approximations as well as experimental data, emphasizing the importance of interaction effects.

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