Delay time measurement in transition metal oxide glass devices
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 20 (2) , 144-149
- https://doi.org/10.1109/T-ED.1973.17621
Abstract
The switching delay times for transition metal oxide glass devices vary from operation to operation. However, a statistical treatment of delay time measurements has revealed the voltage dependence of the delay times and the existence of a well-defined threshold voltage for all of the devices tested. The effect of the switch-OFF history on the performance of the devices has also been investigated. Measurements of the transition metal oxide devices are compared with similar work on chalcogenide devices.Keywords
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