Violet light emitting SrS/SrCl:Eu thin-film electroluminescent devices

3 July 1995

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 67 (1) , 7-9
https://doi.org/10.1063/1.115514

Abstract

Emission of bright (over 9 cd/m²) violet light centered at 404 nm has been achieved from SrS:Eu thin‐film electroluminescent (EL) devices. The brightness has remained stable after several hours of operation. The source of this light is believed to be the 5d–4f transition of Eu²⁺ in the SrCl₂ host, which is formed near the ZnS/SrS interfaces within the sandwich structure of the EL devices. Similar device structures were also utilized to produce ultraviolet EL emission at 367 nm from SrCl₂:Ce³⁺ layers. These devices were grown via atomic layer epitaxy.

Keywords

STRONTIUM CHLORIDES
VISIBLE RADIATION
ZINC SULFIDES
STRONTIUM SULFIDES
THIN FILMS
ELECTROLUMINESCENCE
BRIGHTNESS
OPERATION
INTERFACE STATES
EPITAXY
FABRICATION
LIGHT EMITTING DIODES
EUROPIUM
SEMICONDUCTOR DEVICES
STABILITY

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