Wet Chemical Etching of Alignment V‐Grooves in (100) InP through Titanium or In0.53Ga0.47As Masks
- 1 June 1994
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 141 (6) , 1594-1599
- https://doi.org/10.1149/1.2054968
Abstract
An etch process using (5:1) was developed for the fabrication of highly precise alignment grooves in (100) wafers. We found that with masks the undercut is negligible compared to titanium masks. The shape of cross‐sectional etch profiles was strongly dependent on the orientation of the grooves. We present a model with a complete set of parameters for the present etch system for predicting the cross‐sectional profiles of the resulting mesa structures with high accuracy using a graphical construction procedure.Keywords
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