Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells
- 21 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (12) , 1411-1413
- https://doi.org/10.1063/1.107554
Abstract
We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton‐longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.Keywords
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