Ultrafast carrier dynamics in modified semiconductor-doped glass
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 1-3
- https://doi.org/10.1063/1.100824
Abstract
The recombination lifetime in CdSx Se1−x semiconductor‐doped glass was measured by time‐resolved photoluminescence. It was found that long‐term exposure of the glass to high‐intensity laser pulses produced a permanent reduction of the free‐carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.Keywords
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