Laser annealing of capped and uncapped GaAs

5 July 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (14) , 413-414
https://doi.org/10.1049/el:19790296

Abstract

Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si₃N₄ capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs.

Keywords

PRECIPITATES
GAAS
SI3N4
HCL
ELECTRICAL PROPERTIES
LASER ANNEALING
DISSOLUTION
ION IMPLANTED
CAPPED
UNCAPPED
EVAPORATION
TEM
DECOMPOSED

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