Hot carrier effects in advanced self-aligned bipolar transistors

1 January 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 22-25
https://doi.org/10.1109/iedm.1985.190881

Abstract

This work describes a hot electron induced current gain degradation study in advanced self-aligned sidewall spacer NPN bipolar transistors. The effects of the extrinsic base drive-in thermal cycle on current gain degradation and intrinsic base link-up are discussed.

Keywords

HOT CARRIER EFFECTS
BIPOLAR TRANSISTORS
STRESS
STIMULATED EMISSION
ELECTRONS
HOT CARRIERS
THERMAL DEGRADATION
AVALANCHE BREAKDOWN
DIODES
VOLTAGE