Effect of Pressure on the Resistance of Fused-Ring Aromatic Compounds
- 1 August 1962
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 37 (3) , 474-479
- https://doi.org/10.1063/1.1701360
Abstract
The effect of pressure to several hundred kilobars has been measured on the resistance of seven‐fused ring aromatic compounds, including two polyacenes and five quinones. In general, there is a rapid drop in resistance at lower pressures, followed by a marked leveling at above 200–250 kbars. The leveling is apparently associated with the rapid decrease in compressibility at high pressure observed by Bridgman. The resistance at high pressure varied by several orders of magnitude among the compounds. It seems to be closely associated with the amount of overlap between adjacent molecules in the unit cell. The temperature coefficient of resistance at high pressure was obtained for three compounds. They all remained semiconductors at the highest pressure studied, but the activation energy was about one‐sixth of the atmospheric pressure value.Keywords
This publication has 7 references indexed in Scilit:
- Pressure induced phase transitions in some II–VI compoundsJournal of Physics and Chemistry of Solids, 1962
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- Band Structure and Transport of Holes and Electrons in AnthraceneThe Journal of Chemical Physics, 1961
- The mobility of holes and electrons in organic crystalsMolecular Physics, 1961
- High Pressure Electrical Resistance Cell, and Calibration Points above 100 KilobarsReview of Scientific Instruments, 1961
- The semiconductivity of organic substances. Part 2Transactions of the Faraday Society, 1955
- The Compression of Twenty-One Halogen Compounds and Eleven Other Simple Substances to 100,000 kg/cmProceedings of the American Academy of Arts and Sciences, 1945