Extremely flat layer surfaces in liquid phase epitaxy of GaAs and AlxGa1−xAs
- 1 February 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 87 (2-3) , 343-349
- https://doi.org/10.1016/0022-0248(88)90186-8
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Dislocations as growth step sources in solution growth and their influence on interface structuresThin Solid Films, 1982
- Steps on facets of solution grown GaAs epitaxial layersJournal of Crystal Growth, 1981
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974