Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 371-374
- https://doi.org/10.4028/www.scientific.net/msf.433-436.371
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrically active point defects in n-type 4H–SiCJournal of Applied Physics, 1998
- The Stopping and Range of Ions in MatterPublished by Springer Nature ,1985
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938