A novel 0.25 μm shallow trench isolation technology

Publisher Website

24 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1996.554110

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Inversion channel edge in trench-isolated sub-1/4-μm MOSFET's
IEEE Transactions on Electron Devices, 1996
Nitride-Clad LOCOS Isolation For 0.25/spl mu/m CMOS
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993