High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology
- 27 February 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (5) , 485-487
- https://doi.org/10.1049/el:19920306
Abstract
A process technology is presented for a selfaligned double mesa Si/SiGe HBT. The technology is based on ion implanted device contacts and on the formation of an oxide spacer surmounting the emitter mesa edge, thus permitting a simple separation of base and emitter metal contacts. Transit frequency measurements resulted in 39GHz (VCB = 1 V). Semiconductor devices and materialKeywords
This publication has 1 reference indexed in Scilit:
- Si/SiGe heterojunction bipolar transistors with current gains up to 5000Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003