Molecular layer epitaxy of GaAs
- 1 December 1994
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 82-83, 1-6
- https://doi.org/10.1016/0169-4332(94)90186-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) applicationApplied Surface Science, 1994
- Molecular layer epitaxy of GaAsThin Solid Films, 1993
- Photostimulated molecular layer epitaxyJournal of Vacuum Science & Technology A, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- A study of ZnTe films grown on glass substrates using an atomic layer evaporation methodThin Solid Films, 1980