Ideality and noise figure characteristics of r.f. sputtered millimetre GaAs diodes
- 17 July 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (15) , 581-583
- https://doi.org/10.1049/el:19800403
Abstract
Refractory Schottky barriers have been incorporated in millimetre GaAs mixer diodes to improve r.f. performance and burnout resistance. It is shown that low power r.f. sputter deposition of TiW and Ti-Mo refractories results in degradation of noise temperature ratio and to a first approximation does not affect d.c. parameters, especially the ideality factor.Keywords
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