Hot wall epitaxy of C60 thin films on mica
- 6 February 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (6) , 679-681
- https://doi.org/10.1063/1.114097
Abstract
Using high resolution x-ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60 thin films with a thickness up to 150 nm. The full width at half-maximum of rocking curves of the C60 (111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness.Keywords
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