Nature of damage in diamond implanted at low temperatures
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 569-574
- https://doi.org/10.1016/0925-9635(94)05290-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Thermoelectric material development. Final reportPublished by Office of Scientific and Technical Information (OSTI) ,1994
- A determination of the critical damage density required for “amorphisation” of ion-implanted diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- Ion beam modification of diamondDiamond and Related Materials, 1993
- Carrier activation and mobility of boron-dopant atoms in ion-implanted diamond as a function of implantation conditionsPhysical Review B, 1993
- Ion beam modification and dopant activation in diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Ion-implanted structures and doped layers in diamondMaterials Science Reports, 1992
- Diamond cold cathodeIEEE Electron Device Letters, 1991
- Ion beam induced conductivity in chemically vapor deposited diamond filmsApplied Physics Letters, 1990
- Ohmic contacts formed by ion mixing in the Si-diamond systemIEEE Transactions on Electron Devices, 1989
- Characterization of Boron-Doped Diamond FilmJapanese Journal of Applied Physics, 1989