Epitaxial growth and properties of YBa2Cu3O7−δ/NdGaO3/YBa2Cu3O7−δ trilayer structures
- 11 November 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (20) , 2606-2608
- https://doi.org/10.1063/1.105917
Abstract
We have used laser deposition to make YBa2Cu3O7−δ/NdGaO3/YBa2Cu3O7−δ trilayer structures. NdGaO3 films grow epitaxially on well lattice‐matched substrates, like SrTiO3 (100), and on c‐axis oriented YBa2Cu3O7−δ films. Epitaxial YBa2Cu3O7−δ films were grown on top of the NdGaO3 films, and there was no significant difference in critical temperature between top and bottom layers of the trilayer structures. The resistivity of a 300‐nm‐thick NdGaO3 interlayer was as high as 108 Ω cm at 300 K.Keywords
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