Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness
- 19 March 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (12) , 1718-1720
- https://doi.org/10.1063/1.1356725
Abstract
GdSi x O y gate dielectric films were deposited on Si(001) substrates using ultra-high-vacuum electron-beam evaporation from pressed-powder targets. Transmission electron microscopy showed that the films were amorphous as deposited and remained amorphous when annealed to temperatures up to 900 °C. Capacitance–voltage measurements indicate an equivalent oxide thickness (EOT) of 13.4 Å for a film with composition GdSi0.56O2.59 determined by in situ x-ray photoelectron emission spectroscopy. After forming gas annealing at 500 °C the EOT was reduced to 11.0 Å, at a physical thickness of 45 Å. The same film has a low leakage current of approximately 5.7×10−3 A cm−2 at +1 V, a reduction of 8.7×104 compared to current density estimates of SiO2 films with the same specific capacitance.Keywords
This publication has 16 references indexed in Scilit:
- Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectricsApplied Physics Letters, 2000
- Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kineticsApplied Physics Letters, 2000
- Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric applicationApplied Physics Letters, 2000
- High ε gate dielectrics Gd2O3 and Y2O3 for siliconApplied Physics Letters, 2000
- Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/IEEE Electron Device Letters, 2000
- Stable zirconium silicate gate dielectrics deposited directly on siliconApplied Physics Letters, 2000
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000
- Electrical properties of hafnium silicate gate dielectrics deposited directly on siliconApplied Physics Letters, 1999
- Multiplet structure in high-resolution and spin-resolved x-ray photoemission from gadoliniumPhysical Review B, 1996
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996