Characterization of Cu-In-Ga precursors used to form Cu(In,Ga)Se/sub 2/ films

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Abstract
The stacked precursors for the formation of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ were processed in sequences Cu/In/Ga and Cu/Ga/In for Ga/(Ga+In) ratio ranging from 0.2 to 1.0. The precursors, before and after a 1 hour heat treatment in an Ar atmosphere were found to contain only elemental and binary phases. The precursors were reacted with H/sub 2/Se or elemental Se at 400/spl deg/C and 500/spl deg/C. Reacted precursors contained mixtures of binary phases Cu/sub 2-x/Se, GaSe, Ga/sub 2/Se/sub 3/ and Cu-Ga, and, ternary phases CuInSe/sub 2/ and CuGaSe/sub 2/. The reacted precursors were heat treated in an Ar atmosphere and an H/sub 2/Se atmosphere. The heat treatment in an Ar atmosphere resulted in a single phase CuIn/sub 1-x/Ga/sub x/Se/sub 2/ film, whereas, heat treatment in H/sub 2/Se atmosphere improved only the crystallinity of the phases present and does not effect homogenization.

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