Inversion-mode InP MISFET using a photochemical phosphorus nitride gate insulator

1 August 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (16) , 690-691
https://doi.org/10.1049/el:19850488

Abstract

An inversion-mode n-channel InP MISFET is fabricated using a photochemical phosphorus nitride film as a gate insulator. An effective electron mobility of ∼1700 to 2200 cm²/Vs is obtained and the drain current maintains more than 80% of its initial value after 10³ s at room temperature. These values are much superior to the characteristics of InP MISFETs using thermally deposited phosphorus nitride gate insulators. These improvements are probably caused by the reduction of thermal degradation of InP substrates through the application of the photochemical CVD technique.

Keywords

SEMICONDUCTOR TECHNOLOGY
III-V SEMICONDUCTORS
INVERSION-MODE N-CHANNEL INP MISFET
ELECTRON MOBILITY
REDUCTION OF THERMAL DEGRADATION
PHOTOCHEMICAL CVD TECHNIQUE
DRAIN CURRENT
PN GATE INSULATOR

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