Photoelectronic Evaluation of Electron Radiation Damage in CdS Crystals

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Abstract
The effects of electron radiation damage for electrons with energy between 75 keV and 2 MeV have been investigated in CdS single crystals by measurements of dark conductivity, photoconductivity vs temperature, spectral response of photoconductivity, optical quenching of photoconductivity, and thermally stimulated conductivity. The major effect of electron radiation damage is to decrease the electron lifetime in high‐resistivity photosensitive crystals if the electron energy is 400 keV or higher. Relatively minor effects are also observed in dark conductivity, optical quenching, and thermally stimulated conductivity. Low‐temperature annealing of irradiated crystals under illumination removes the effects of damage on the electron lifetime. After such annealing, however, all irradiated crystals exhibit a distinctly different trap distribution from nonirradiated crystals, prominent in which is the 289°K trap previously investigated and described as a repulsive trap in CdS and CdSSe crystals.