Pulsed electron beam annealing of ion implanted Si layers
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 43 (1) , 31-36
- https://doi.org/10.1080/00337577908226420
Abstract
Pulsed electron beam annealing (PEBA) of ion implanted Si layers was investigated by MeV 4He+ backscattering and TEM techniques. Silicon substrates, (100) and (lll) in orientation, were implanted either with 28Si+ ions or As ions, and another set of samples was implanted with both ions. The implantation energy ranged between 50 and 200 keV with a total dose of 5 × 1015/cm2 It was found that electron beam. annealing is effective in reordering ion-damaged layers in some cases where thermal annealing (∼ 550°C) is not. Pulsed electron beam annealing apparently causes melting of the surface region. The results show that the melt depth depends on the microstructure of the implanted layers.Keywords
This publication has 1 reference indexed in Scilit:
- Color‐Band Generation during the High Dose Ion Implantation of Silicon WafersJournal of the Electrochemical Society, 1978