Polarization-Based Adjustable Memory Behavior in Relaxor Ferroelectrics
- 30 August 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 89 (12) , 127601
- https://doi.org/10.1103/physrevlett.89.127601
Abstract
The irreversible decay of the spontaneous polarization above the phase-transition temperature is a limiting factor in any application of ferroelectric crystals. Here we show that electric fields applied at high temperatures induce a preferred direction in the crystal which is stable even after repeated heating and cooling through the phase transition. This preference in direction leads to a reorientation of domains in the ferroelectric phase. We use pyroelectric measurements to show that the directional preference originates from internal charge carriers interacting with domain walls.Keywords
This publication has 22 references indexed in Scilit:
- Local electric-field-driven repoling reflected in the ferroelectric polarization of Ce-doped Sr0.61Ba0.39Nb2O6Applied Physics Letters, 2002
- Ferroelectric nanodomains in the uniaxial relaxor systemPhysical Review B, 2001
- Influence of pinning effects on the ferroelectric hysteresis in cerium-dopedPhysical Review B, 2001
- Phase transitions in Sr 0.61 Ba 0.39 Nb 2 O 6 :Ce 3+ : I. Susceptibility of clusters and domainsZeitschrift für Physik B Condensed Matter, 2000
- Ferroelectric MemoriesPublished by Springer Nature ,2000
- The Physics of Ferroelectric MemoriesPhysics Today, 1998
- All-optical three-dimensional mapping of 180° domains hidden in a BaTiO_3crystalOptics Letters, 1996
- Piezoelectric Actuators and Ultrasonic MotorsPublished by Springer Nature ,1996
- Ferroelectric MemoriesScience, 1989
- Pyroelectric materials, their properties and applicationsPhysica Status Solidi (a), 1982