Preparation of CuInS 2 on GaP grown by LPE
- 19 March 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (6) , 245-246
- https://doi.org/10.1049/el:19810174
Abstract
The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.Keywords
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