Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure
- 1 March 1997
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 31 (3) , 276-278
- https://doi.org/10.1134/1.1187126
Abstract
Thermoelectric power measurements have been carried out for the narrow-band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with the data obtained by oscillation methods. These correlations allow one to use the thermoelectric power to search for topological electronic transitions in semiconductors.Keywords
This publication has 2 references indexed in Scilit:
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- Transformation of tellurium valence band induced by hydrostatic pressurePhysica Status Solidi (b), 1971