A 600-volt MOSFET designed for low on-resistance
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (2) , 343-349
- https://doi.org/10.1109/T-ED.1980.19866
Abstract
A 600-V vertical power MOSFET with low on-resistance is described. The low resistance is achieved by means of achieving near-ideal drain junction breakdown voltage and reduced drain spreading resistance from the use of an extended channel design. The various tradeoffs inherent in the design are discussed. Both calculated and experimental data are presented. The remote source configuration of the experimental device is also discussed.Keywords
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