Study of CuGa(Se,Te)2 bulk materials and thin films

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Abstract
We have grown and studied CuGa(Se,Te)2 photovoltaic bulk materials and thin films. This compound can readily be grown with p‐type conductivity and can have a very good lattice match with CdS for a Se:Te ratio giving an energy gap close to 1.5 eV. The lattice parameters were determined by x‐ray diffraction, and the energy gap calculated for temperatures between 77 and 300 K from luminescence studies. Thin films were grown using a close‐spaced vapor transport technique, with iodine as reagent. The chemical equations governing the transport were determined. Good‐quality CuGaSe2 thin films were easily grown, but we could not get CuGa(SexTe1−x)2 thin films when x2 phase diagram. Thermal evaporation experiments gave us similar results, but flash evaporation gave us thin films with a composition close to the source composition.

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