Charge control mechanism in MODFET's: A theoretical analysis

1 November 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (11) , 1825-1826
https://doi.org/10.1109/t-ed.1986.22748

Abstract

A new approach to the theory of the charge control mechanism in modulation-doped transistors (MODFET's) is presented. The present theory takes into account quantum mechanical results for the average separation of the two-dimensional electron gas from the Al1-xGaxAs/GaAs interface. A physical interpretation to the effective thickness of the input capacitor is also discussed.

Keywords

CHARGE
THEORETICAL
INPUT
CAPACITOR
TRANSISTORS
THICKNESS
AL1
CONTROL MECHANISM
MODFET'S
XGAXAS/GAAS