Selective Dry Etching of III‐V Nitrides in Cl2 / Ar , CH 4 / H 2 / Ar , ICl/Ar, and IBr/Ar

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Abstract
The selectivity for etching the binary (GaN, AlN, and InN) and ternary nitrides (InGaN and InAlN) relative to each other in , ICl/Ar, or IBr/Ar electron cyclotron resonance (ECR) plasmas, and or reactive ion (RIE) plasmas was investigated. Cl‐based etches appear to be the best choice for maximizing the selectivity of GaN over the other nitrides. GaN/AlN and GaN/InGaN etch rate ratios of ∼10 were achieved at low RF power in under ECR and RIE conditions, respectively. GaN/InN selectivity of 10 was found in ICl under ECR conditions. A relatively high selectivity (>6) of InN/GaN was achieved in under ECR conditions at low RF powers (50 W). Since the high bond strengths of the nitrides require either high ion energies or densities to achieve practical etch rates it is difficult to achieve high selectivities.

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