Relating Dynamics of FET Behavior to Operating Regions

1 November 2001

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 40, 1-10
https://doi.org/10.1109/arftg.2001.327499

Abstract

Dispersion effects and the operating regions they effect are identified in a HEMT and a MESFET. Large-signal pulse and small-signal RF measurements reveal a simple structure to the otherwise complicated dynamic behavior of the FETs. A simple model demonstrates how heating, impact ionization, and leakage currents can contribute to this behavior and that each has an effect in specific regions of bias and operating frequency. It is possible to identify operating conditions that will or will not be affected by dispersion with measurements over a wide range of frequencies from dc to microwave and a range of terminal potentials.

Keywords

This publication has 4 references indexed in Scilit:

Measurement and characterization of HEMT dynamics
IEEE Transactions on Microwave Theory and Techniques, 2001
A physical model for the kink effect in InAlAs/InGaAs HEMTs
IEEE Transactions on Electron Devices, 2000
Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
IEEE Electron Device Letters, 2000
Pulsed device measurements and applications
IEEE Transactions on Microwave Theory and Techniques, 1996