Photoluminescence studies of 4He- and 9Be-implanted semi-insulating InP

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Abstract
Low‐temperature (5 °K) photoluminescence data on the annealing characteristics of both unimplanted and implanted (4He, 9Be) semi‐insulating, Fe‐doped (100) InP are presented. A rf plasma‐deposited Si3N4 was used as the encapsulant during anneals. Annealing with this cap results in the appearance of a new spectral feature at 1.378 eV. For all samples examined here, high temperature (T?750 °C) anneals result in band‐edge integrated intensities greater than in virgin material. This phenomenon is correlated with the appearance of the 1.378‐eV peak. In samples implanted with 100 keV 9Be the band‐edge peak is observed to shift to lower energies with increasing dose. Also, a new emission peak at 1.382 eV is shown to be associated with Be acceptors. The ionization energy of Be is estimated to be 41.3±3 meV. For 30‐min anneals, maximum Be activation appears to occur for all doses at ∼750 °C. At this temperature, Be activation appears to saturate between 30 and 60 min.

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