Amorphisation of silicon by bombardment with group IV ions
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 307-311
- https://doi.org/10.1016/s0168-583x(87)80062-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Atomic structure of ion implantation damage and process of amorphization in semiconductorsJournal of Vacuum Science & Technology A, 1984
- Dual ion implantation technique for formation of shallow p+/n junctions in siliconJournal of Applied Physics, 1983
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980