Comparison of models for calculation of optical gain in gallium nitride
- 6 June 1997
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 2994, 129-140
- https://doi.org/10.1117/12.275555
Abstract
We discuss theoretical predictions for the gain spectra in GaN-based lasers from the point of view of adequate modeling, aimed at optimization of the laser structure and cavity parameters. The Coulomb enhancement effect is included, and it is shown that it leads to an increase of both the gain cross-section and the threshold current in edge-emitting lasers, due to shortening of carrier lifetime. The minimum threshold current density in such lasers with bulk active regions is estimated to be between 2 and 4 kA/cm2 at room temperature.Keywords
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