Power Transistor Amplifier Design Using Large-Signal S Parameters

1 January 1973

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gmtt.1973.1123169

Abstract

Large-signal S-parameters are used in the design of UHF power transistor amplifiers, yielding analytical means for calculating stability criteria and circuit impedances for the desired gain and output power. A 3.5 watt, 500 MHz amplifier designed using these methods is described.

Keywords

POWER TRANSISTORS
POWER AMPLIFIERS
SCATTERING PARAMETERS
DESIGN METHODOLOGY
CIRCUITS
POWER GENERATION
IMPEDANCE MATCHING
POWER MEASUREMENT
STABILITY CRITERIA
IMPEDANCE MEASUREMENT

This publication has 1 reference indexed in Scilit:

Large-Signal S-Parameter Characterization of UHF Power Transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1973