Investigation of the amorphization process in GaAs and GaP by means of optical spectroscopy
- 16 August 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 108 (2) , K93-K96
- https://doi.org/10.1002/pssa.2211080243
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972