TRITIUM-LABELED FIELD-INDUCED PROTON TRANSPORT IN SiO2 FILMS
- 1 August 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3) , 95-96
- https://doi.org/10.1063/1.1755051
Abstract
Tritiated ethanol is adsorbed on the surface of silicon oxide, the oxide is metallized to form an MOS capacitor, and an electric field is applied at elevated temperature to generate ion injection into the oxide film. It is shown that during positive bias‐temperature stress, protons, derived from the hydrogens of the ethanol, are transported to the oxide‐silicon interface, and that sodium ion transport (examined via neutron activation analysis) is negligible.Keywords
This publication has 3 references indexed in Scilit:
- SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMSApplied Physics Letters, 1967
- Tracer Evaluation of Hydrogen in Steam-Grown SiO[sub 2] FilmsJournal of the Electrochemical Society, 1967
- Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysisIEEE Transactions on Electron Devices, 1966