Zn3P2—a new material for optoelectronic devices
- 31 August 1994
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 25 (5)
- https://doi.org/10.1016/0026-2692(94)90078-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Inter-band transitions in Zn3P2Journal of Physics: Condensed Matter, 1990
- Optical vibrations in the Zn3P2latticeJournal of Physics: Condensed Matter, 1989
- Reflectivity, optical constants and interband transitions in Zn3P2Solid State Communications, 1989
- Electrical Properties of Zn3P2 at Room TemperaturePhysica Status Solidi (a), 1989
- Optical and electrical investigations of imperfection levels in Zn3P2Journal of Physics and Chemistry of Solids, 1989
- Lattice modes of Zn3P2Solid State Communications, 1988
- Electrical conductivity of Zn3P2Physica Status Solidi (a), 1986
- Minority-carrier diffusion length in Zn3P2Physica Status Solidi (a), 1981
- Energy band structures of Cd3P2 and Zn3P2Physica Status Solidi (b), 1971
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956